PUBLICATIONS de
MICROSCOPIE ELECTRONIQUE
1977
1980
1987
1988
1989
1990
1991
-1- Structure et propriétés magnétiques des composés sulfurés du Molybdène MMo2S4 (M=Fe,Cr,V) Thèse de doctorat 3ème cycle de l'Université PARIS VI (1977) C.MENEAU d'ANTERROCHES
2- Etude de la structure et des propriétés magnétiques du sulfure monoclinique FeMo2S4 C.d'ANTERROCHES, B.BOUCHER Acta Cryst. (1977) B33 ,1495
-3- Optical filtering of images of dislocation core J.DESSEAUX, C.d'ANTERROCHES 9th Congress on Proc. E.M.S.A. San Antonio (1979) 388 E.M. Toronto (1978) 310
-4- High resolution studies of dislocations and grain boundaries A.BOURRET,C.d'ANTERROCHES 37th -
-5- Atomique structure of 9 grain boundary in Germanium C.d'ANTERROCHES, G.SILVESTRE, A.M.PAPON, J.J.BACMAN, A.BOURRET 7th E.U.R.E.M. La Haie (1980) 316
-6- Filtering of electron images of crystal defects J.DESSEAUX ,C.d'ANTERROCHES, J.M.PENISSON, A.RENAULT J.Physique (1981) 41 , 565
-7- Defect structure in Cz Silicon and Germanium studied by high resolution electron microscopy A.BOURRET, J.DESSEAUX, C.d'ANTERROCHES Microscopy semicond. Mater. Conf.Inst. Phys. Conf. ser.60 (1981) 9
-8- Structure atomique des joints de flexion de grande désorientation dans le Germanium. Thèse de doctorat d'Etat Fev 1982 GRENOBLE C. MENEAU d'ANTERROCHES
-9- Structure de joints de grains dans les Semi-Conducteurs A.BOURRET, C.d'ANTERROCHES J.Physique Colloque C1 , 43 (1982) C1-1
-10-High resolution T.E.M. study of Al-Si 1%/Si interface C.d'ANTERROCHES Microscopy Semicond. Mater. Conf.Inst.Phys. Conf.ser 67 (1983) 95
-11-De l'usage de la microscopie électronique en transmission à l'étude des composants élémentaires Substrats,Locos,Interfaces C.d'ANTERROCHES, J.P.GONCHOND, D.MOI, A.PERIO NT/CNS/RPT/12 (1983) Note Technique C.N.E.T.
-12-Atomique Structure of (011) and (001) near-coincident tilt boundaries in Germanium and Silicium C.d'ANTERROCHES, A.BOURRET Phil. Mag. A. 49 (1984) 783
-13-High Resolution T.E.M. study of SiO2/Si(001) interface C.d'ANTERROCHES J.Micros. Spec. Elect. 9 (1984) 147
-14-Caractérisation physique et électrique d'une structure d'isolement obtenue par le procédé S.I.L.O. C.d'ANTERROCHES, J.P.GONCHOND, D.MOI, P.DEROUX-DAUPHIN NT/CNS/RPT/18 NT/EFCIS/DT-84-187 (1984)
-15-Realisation and electrical properties of monolithic metal-base transistor: the Si/CoSi2/Si structure E.ROSENCHER, S.DELAGE, F.ARNAUD d'AVITAYA , C.d'ANTERROCHES, K.BELHADDAD, J.C.PFISTER Physica 134B (1985) 106
-16-High resolution electron microscopy on the initial stages of CoSi2 formation on Si(111) C.d'ANTERROCHES Surface Science 168 (1986) 751
-17-Structural analyses of a Si/CoSi2/Si heterostructure using Ultra high resolution T.E.M. C.d'ANTERROCHES, F.ARNAUD d'AVITAYA Thin Solid Films 137 (1986) 351
-18-High resolution electron microscopy of InAs/GaAs strained layer superlattices C.d'ANTERROCHES, J.Y MARZIN,
G.LE ROUX, L.GOLSTEIN Jour. of crystal Growth 81 (1987) 121
-19-Silicon overgrowth on CoSi2/Si(111) epitaxial structures: Application to permeable base transistor F.ARNAUD d'AVITAYA, J.A.CHROBOCZEK, C.d'ANTERROCHES, G.GLASTRE Y.CAMPIDELLI, E.ROSENCHER Jour. of Crystal Growth 81 (1987) 463
-20-Characterization of the silicon on insulator material formed by high-dose Oxygen implantation using spectroscopic ellipsometry F.FERRIEU, D.P. VU, C.d'ANTERROCHES, J.C.OBERLIN S.MAILLET, J.J.GROB Jour. of Appl. Phys. 62 (1987) 3458
-21-Low temperature transport properties of ultra thin CoSi2 epitaxial films P.A.BADOZ, A.BRIGGS, E.ROSENCHER, F.ARNAUD d'AVITAYA, C.d'ANTERROCHES Appl. Phys. Lett. 51 (1987) 169
-22-Co/Si(111) interface formation at room temperature J.DERRIEN, M.de CRESCENZI, E.CHAINET, C.d'ANTERROCHES, C.PIRRI, G.GEWINNER, J.C.PERUCHETTI Physical Review B 36 (1987) 6681
-23-Co/Si(111) interface: formation of initial CoSi2 phase at room temperature J.Y.VEUILLEN, J.DERRIEN P.A.BADOZ E.ROSENCHER, C.d'ANTERROCHES Appl. Phys. Lett. 51 (1987) 1448
-24-La Microscopie électronique: Une puissante mais délicate technique d'imagerie C.d'ANTERROCHES, B.GUENAIS L'écho des RECHERCHES 127 (1987) 5
-25-Magnetic and T.E.M. studies of formation of Cobalt Silicides thin films R.MADAR, C.d'ANTERROCHES, F.ARNAUD d'AVITAYA, D.BOURSIER O.THOMAS, J.P.SENATEUR Workshop on Silicides and metals for V.L.S.I. applications (1987) San Juan California
-26-Molecular beam epitaxy growth and selective doping of Si1-xGex/Si superlattices H.J.HERZOG, H.JORKE,E.KASPER, C.d'ANTERROCHES 3rd Int. Conf. on Modulated Structures (1987) Montpellier France
-27-Structure analysis of the Al/InP(100) interface C.d'ANTERROCHES, F.HOUZAY, M.BENSOUSSAN Mat. Res. Soc. Symp. Proc. 94 (1987) 237
-28-The Physics of Metal Base Transistor E.ROSENCHER, F.ARNAUD d'AVITAYA, P.A. BADOZ, C.d'ANTERROCHES, G.GLASTRE, G.VINCENT, J.C.PFISTER Mat. Res. Soc. Symp. Proc. 91 (1987) 415
-29-High quality silicon on insulator structure formed by Oxygen implantation and lamp annealing D.P.VU, M.HAOND,
C.d'ANTERROCHES, J.C.OBERLIN, A.GOLANSKI J.J.CROB, S.MAILLET Appl. Phys. Lett. 52 (1988) 819
-30-Transmission electron microscopy study of the formation of epitaxial CoSi2/Si(111) by a room temperature codeposition technique C.d'ANTERROCHES, H.NEJAT YAKUPOGLUT.L.LIN, R.W.FATHAUER, P.J.GRUNTHANER Appl. Phys. Lett. 52 (1988) 434
-31-Room temperature codeposition growth technique for pinhole reduction in epitaxial CoSi2 on Si(111) T.L.LIN, R.W.FATHAUER, P.J.GRUNTHANER, C.d'ANTERROCHES Appl. Phys. Lett. 52 (1988) 804
-32-Growth-front instabilities in solid-state recrystallization of amorphous GaAs films C.LICOPPE, Y.I.NISSIM, C.d'ANTERROCHES Physical Review B 37 (1988) 531
-33-Magnetic and transmission electron microscopy studies of the formation of Cobalt silicide thin films R.MADAR, C.d'ANTERROCHES, F.ARNAUD d'AVITAYA, D.BOURSIER O.THOMAS, J.P.SENATEUR J.Appl.Phys. 64 (1988) 3014
-34-CoSi formation during CoSi2 oxidation C.d'ANTERROCHES, P.DEBESNEST Inst. Phys. Conf. ser93 (1988) 399
-35-Characteristics of the thin gate dielectric in a rapid thermal processing machine and temperature uniformity studies N.CHAN TUNG, Y.CATARINI, C.d'ANTERROCHES, J.L.BUEVOZ Appl. Phys. 47 (1988) 237
-36-Epitaxial silicon layers made by reduced pressure temperature C.V.D. J.L.REGOLINI, D.BENSAHEL, J.MERCIER, C.d'ANTERROCHES, A.PERIO M.R.S. fall meeting Boston 1988
-37-Growth of epitaxial silica on vicinal Si(001) surfaces during
thermal oxidation in O2 F.ROCHET, M.FROMENT, C d'ANTERROCHES, H.ROULET, G.DUFOUR Phil. Mag. B 59 (1989) 339
-38-A Silicon-on-insulator structure formed by implantation of Megaelectronvolt Oxygen J.J. GROB, A. GROB, P. THEVENIN, P.SIFFERT, A.GOLANSKI, C.d'ANTERROCHES Materials Science and Engineering, B2 (1989) 123
-39-Growth and electronic transport in thin epitaxial CoSi2/Si heterostructures F.ARNAUD d'AVITAYA, P.A.BADOZ, A.BRIGGS, C.d'ANTERROCHES, J.Y.DUBOZ, G.FISHMAN, G.GLASTRE, J.C.PFISTER,C.PUISSANT, E.ROSENCHER, G.VINCENT heterostructures on Silicon: One step Further with Silicon Y.Nissim and E.Rosencher (eds) (1989) 253 Kluwer Academic Publishers
-40-A study of 2Mev Oxygen implantation to form deeply buried SiO2 layers J.J.CROB, A.CROB, P.THEVENIN, P.SIFFERT, C.d'ANTERROCHES, A.GOLANSKI J. of Material Research 4, (1989) 1227
-41-High resolution electron microscopy study of Indium distribution in InAs/GaAs multilayers C.d'ANTERROCHES, J.M.GERARD, J.Y.MARZIN N.A.T.O. ASI (B) : Evaluation of advanced semiconductor materials by electron microscopy Ed D. Cherns (1989) 47
-42-Semiconducting silicide-silicon heterojunction elaboration by solid phase epitaxy N.CHERIEF, C.d'ANTERROCHES, R.C.CINTI, T.A.NGUYEN TAN, J.DERRIEN Appl. Phys. Lett. 55, (1989), 1671
-43-High Resolution Electron Microscopy Study of ErSi2/Si(111) interface C.d'ANTERROCHES, P.PERRET, F.ARNAUD d'AVITAYA, J.A. CHROBOCZEK Thin Solid Films 184 (1989) 349
-44-Optical investigation of the band structure of InAs/AsAs short period superlattices J.M.GERARD, J.Y.MARZIN, C.d'ANTERROCHES B.SOUCAIL, P.VOISIN Appl. Phys. Let. 55 (1989) 559
-45-Optical Study of InAs/GaAs Ordered alloys band structure J.M.GERARD, J.Y.MARZIN, C.d'ANTERROCHES, B.SOUCAIL, P.VOISIN Surface Science 229 (1990) 456
-46-Interface structure of a GaAs/AlAs superlattice MBE grown on a GaAs vicinal surface A.POUDOULEC, B.GUENAIS, C.d'ANTERROCHES, A.REGRENY j. of Crystal Growth 100 (1990) 529
-47-Comment on: "Chemical mapping of semiconductor interfaces at near-atomic resolution" B. DEVEAUD, B.GUENAIS, A.POUDOULEC, A. REGRENY, C.d'ANTERROCHES Phys. Rev. Lett. 65 (1990) 2317
-48-Structure of the silicide/Si, SiO2/Si interface analysed using high resolution transmission electron microscopy C.d'ANTERROCHES, P.PERRET, J.R.BROSSELIN Colloque de Physique C1 51 (1990) C1-729
-49-Defects in ErSi2/Si(111) Epitaxial films C.MENEAU d'ANTERROCHES Proceedings of XII International Congress for Electron Microscopy 4 (1990) 572
-50-Low Temperature Phase Separation in CeSi1.86 R.MADAR, B.LAMBERT, E.HOUSSAY, C.MENEAU d'ANTERROCHES, J.PIERRE, O.LABORDE, J.L.SOUBEYROUX, A.ROUAULT, J.PELISSIER, J.P.SENATEUR J. of Material Research 5 (1990) 2126
-51-Epitaxial silica on stepped Si(001) surfaces F.ROCHET, M.FROMENT, C.d'ANTERROCHES, H.ROULET G.DUFOUR, R.CALSOU 6th int. conf. on Passivity Sapporo Japan (1989) Solid State Com.
-52-ErSi2/Si interface structure determination from lattice imaging C.MENEAU d'ANTERROCHES Microsc. Microanal. Microstruct. 1(1990) 247
-53-Selective Chemical Vapor Deposition of TiSi2 E.MAESTROMATTEO, J.L.REGOLINI,C.d'ANTERROCHES, D.DUTARTRE D.BENSAHEL, J.MERCIER, C.BERNARD, R.MADAR CVD XI Seattle Octobre 1990
-54-High resolution electron microscopy study of the ErSi2/Si(111) interface C.d'ANTERROCHES, P.PERRET, F.ARNAUD d'AVITAYA and J.A.CHROBOCZEK Thin solid Films 184 (1990) 349
-55-Interface structure of a GaAs-AlAs superlattice MBE grown on a GaAs vicinal surface A.POUDOULEC, B.GUENAIS, C.d'ANTERROCHES, A.REGRENY J. of Crys. Growth 100 (1990) 529
-56-Cobalt disilicide growth and interface structure analyse C.MENEAU d'ANTERROCHES, P.PERRET Phil. Mag. A 63(1991)1221
-57-Silicon epitaxial growth on GaAs using a rapid thermal chemical vapor deposition process Y.I.NISSIM, J.SAPRIEL,Y.GAO, C.d'ANTERROCHES,J.L.REGOLINI, D.BENSAHEL Appl. Phy. Let. 59 (1991) 656
-58-Interface roughnes of GaAs/AlAs superlattices MBE-grown on vicinal surfaces P.AUVRAY, A.POUDOULEC, M.BAUDET, B.GUENAIS, A.REGRENY,C.d'ANTERROCHES, J.MASSIES Appl. Surf.Science 50 (1991) 109
-59-Présentation des microscopes électroniques en transmission développés pour la microanalyse C.d'ANTERROCHES Note CNET NT/CNS/TCI/38
-60-Influence of substrate misorientation on the structural quality of lattice matched GaAs/ScYbAs/GaAs structures B.GUENAIS, A.POUDOULEC, A.GUIVARC'H, Y.BALLINI,V.DUREL,C.d'ANTERROCHES Microsc. Microanal. Microstruct. 3(1992) 29
-61-Comparative study of interface structure in GaAs/AlAs supperlattices grown by molecular epitaxy on (001) GaAs substrates misoriented towards (111)Ga or (111)As plane A.POUDOULEC, B.GUENAIS,C.d'ANTERROCHES, P.AUVRAY,M.BAUDAIS, A.REGRENY Appl.Phys.Lett 60(1992) 2406
-62-Epitaxial orientation of -FeSi2/Si heterojonctions obtained by RTP chemical vapor deposition I.BERBEZIER,J.L.REGOLINI,C.d'ANTERROCHES Microsc. Microanal. Microstruct. 4 (1993) 5
-63-Growth of silicon thin films on erbium silicide by solid phase epitaxy J.Y VEUILLEN, C.d'ANTERROCHES, T.A.NGUYEN TAN J. Appl. Phys. 75 (1994 ) 223
-64-Analysis of MBE growth and atomic exchange in highly strained InAs layers C.d'ANTERROCHES, J.M.GERARD Microsc. Microanal. Microstruct. 5 (1994) 213
-65-PEELS Nanoanalysis of nitrided gate oxide layers with a Philips 200KV FEG microscope C.BERNARDI, E; VAN CAPPELLEN, C.d'ANTERROCHES, M.OTTEN ICEM 13 Paris ( 1994 ) 689
-66-Structural quality of lattice matched GaAs/Sc0.2Yb0.8As/(001)GaAs structures B.GUENAIS, A.POUDOULEC, A.GUIVARC'H, Y.BALLINI,V.DUREL,C.d'ANTERROCHES
-67-Monolayer scale study of segregation effects in InGaAs/GaAs heterostructures J.M.GERARD,C.d'ANTERROCHES
-68-C.BERNARDI, C.d'ANTERROCHES Journal of Non Crystalline Solids ( 1995 ) 369
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